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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
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2SD2423
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Features
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
1 3 2
1
2, 4
ID 2 k (Typ) 0.5 (Typ) 3
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SD2423
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg ID
1
Ratings 50 50 7 1.5 1 150 -55 to +150 1.5
Unit V V V A W C C A
1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 50 7 -- 2000 -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- Max 70 -- 70 -- 10 10000 1.5 2.3 2.0 2.5 3.5 V V V V V Unit V V V V A Test conditions I C = 100 A, IE = 0 I C = 10 mA, RBE = I C = 1.5 A, RBE = , L = 10 mH*1 I E = 50 mA, IC = 0 VCE = 40 V, RBE = VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1
Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector to emitter saturation voltage Base to emitter saturation voltage Base to emitter saturation voltage Emitter to collector diode forward voltage Notes: 1. Pulse test 2. Marking is "GT". VCEO(sus) V(BR)EBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD
2SD2423
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (W) (on the alumina ceramic board) 2.0 (A) 10 Area of Safe Operation
1m
Pw
IC
1.5
1
DC Op er ati
s
=
ms 10
Collector Current
1.0
0.1
on
0.5
0.01 Ta = 25C 1 shot pulse
0
50 100 150 200 Ambient Temperature Ta (C)
0.001 0.1 1 10 100 Cellector to Emitter Voltage V CE (V)
Typical Output Characteristics 2.0 I C (A) Pc = 1 W
1 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
DC Current Transfer Ratio vs. Collector Current 10000 h FE 5000 2000 1000 500 25C -25C Ta = 75C VCE = 3 V pulse
1.6
Collector Current
1.2
0.3 mA
0.8
0.4
0.2 mA
DC Current Transfer Ratio
A 0.5 m 0.4 mA
200 100 0.1 0.2 0.5 1 2 5 Collector Current I C (A) 10
0
I B = 0 Ta = 25C 1 2 3 4 5 Collector to Emitter Voltage VCE (V)
2SD2423
Collector to Emitter Saturation Voltage vs. Collector Current 10 I C / I B = 200 5 pulse 2 1 Ta = -25C 25C 75C Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage V BE(sat) (V) 5 2 1 Ta = -25C 25C 75C
Collector to Emitter Saturation Voltage V CE(sat) (V)
0.5
0.5
0.2 0.1 0.1 0.2 0.5 1 2 5 Collector Current I C (A) 10
0.2
I C / I = 200 B 0.1 pulse 0.1 0.2 0.5 1 2 5 Collector Current I C (A)
10
Collector Current vs. Base to Emitter Voltage Collector Output Capacitance Cob (pF) 3000 I C (mA) VCE = 3 V 1000 pulse 300 100 30 10 3 1 0 0.4 0.8 1.2 1.6 2.0 Base to Emitter Voltage V BE (V) Ta = -25C 25C 75C 100 50 20 10 5
Collector Output Capacitance vs. Collector to Base Voltage Ta = 25C IE = 0 f = 1 MHz
Collector Current
2 1 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 10 V CB (V)
2SD2423
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Hitachi, Ltd.
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